More Post from the Author
- EaseUS to Unveil Data Recovery Wizard 20.1.0 with Breakthrough SSR Technology, Setting a New Standard for Fragmented File Recovery
- ETHGas startet den Ethereum-Blockspace-Terminmarkt mit Zusagen in Hhe von 800 Millionen US-Dollar und einer Seed-Runde ber 12 Millionen US-Dollar unter Fhrung von Polychain Capital
- Cognizant und Microsoft erweitern ihre Partnerschaft, um die KI-Transformation voranzutreiben und die Erfahrungen von Frontier Firms zu verbessern
- Bupa Hong Kong has selected Cognizant to deliver an AI-driven BPaaS solution to transform health insurance claims
- SK hynix First to Complete Intel Data Center Certification for 32Gb Die-based 256GB Server DDR5 RDIMM
Beneq Transform Qualified for GaN Power Device Production by Tier 1 Asian Manufacturer
Beneq expands global footprint in GaN device manufacturing with ALD tool qualification at leading Asian semiconductor manufacturer
ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 GaN power device manufacturer in Asia. This milestone confirms the relevance of Beneq's ALD technology in enabling scalable, high-reliability GaN applications.
Gallium nitride (GaN) semiconductors are central to improving efficiency and performance of power electronics and RF devices across consumer, automotive, datacenters, and other industrial markets. The qualification of the Beneq Transform platform by another leading GaN power device manufacturer highlights its capability to meet stringent performance and reliability demands in commercial production.
The system enables a proprietary three-step process - plasma-based surface pre-cleaning, plasma-enhanced ALD (PEALD) of interfacial layers, and thermal ALD of dielectric films-executed under continuous vacuum. This architecture ensures high-quality interface engineering and process reliability, which is critical for wide-bandgap materials such as GaN and SiC. Additional capabilities include nitride film deposition (e.g., AlN, SiN) and thermal ALD of films such as AlO, AlN, SiO, and HfO, offering flexibility across GaN HEMTs, ICs, and vertical devices.
The vacuum-integrated cluster tool design features high throughput and best-in-class cost-of-ownership while supporting demanding process requirements. Seventeen Beneq Transform tools are now in operation globally for GaN device production and technology development.
"Qualification by a Tier 1 GaN power device manufacturer underscores the strength of our Transform platform and its leading role in GaN manufacturing," said Pasi Merilinen, Vice President, Semiconductor ALD at Beneq. "We remain focused on enabling our customers' production goals through robust, application-driven ALD solutions."
Beneq further advances GaN process capabilities through collaboration with imec as a member of its Industrial Affiliation Program (IIAP). A recently commissioned Transform tool at imec expands the joint R&D in GaN surface treatments and dielectric integration started two years ago.
Press Contact
Charlotte Brlund, Event and Communications Lead
[emailprotected]
This information was brought to you by Cision http://news.cision.com
The following files are available for download:
Beneq Transform Qualified for GaN Device Production by Leading Asian Manufacturer | |
Hero 1 |
SOURCE Beneq Oy

More Post from the Author
- EaseUS to Unveil Data Recovery Wizard 20.1.0 with Breakthrough SSR Technology, Setting a New Standard for Fragmented File Recovery
- ETHGas startet den Ethereum-Blockspace-Terminmarkt mit Zusagen in Hhe von 800 Millionen US-Dollar und einer Seed-Runde ber 12 Millionen US-Dollar unter Fhrung von Polychain Capital
- Cognizant und Microsoft erweitern ihre Partnerschaft, um die KI-Transformation voranzutreiben und die Erfahrungen von Frontier Firms zu verbessern
- Bupa Hong Kong has selected Cognizant to deliver an AI-driven BPaaS solution to transform health insurance claims
- SK hynix First to Complete Intel Data Center Certification for 32Gb Die-based 256GB Server DDR5 RDIMM
